http://sycelectronica.com.ar/semiconductores/IRFP450.pdf WebIRFP350 Datasheet (HTML) - International Rectifier IRFP350 Product details DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best …

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WebIRFP350, SiHFP350 Vishay Siliconix Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit R G I AS tp D.U.T L V DS +-V DD 10 V Vary t p to obtain required I AS I AS V DS V DD V DS t p Q GS ... WebIRFP350 Product details. FEATURES. Low RDS (on) Improved Inducttive ruggedness. Fast switching times. Rugged polysilicon gate cell structure. Low input capacitance. Extended … tours sedona

Transistor IRFP350 PDF Field Effect Transistor Mosfet - Scribd

WebIRFP350 are in stock at Jinftry. Please place your order now! Jinftry will ships the parts as soon as possible. Transistors-FETs-MOSFETs-Single(MOSFET N-CH 400V 16A TO247-3). Manufacturer:Vishay Siliconix. In Stock:1370 pcs. Unit Price: RFQ / Inquiry Account Login or Register English Language Translation. WebPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250 µ A, V GS = 0V (Figure 10) 500 - - V Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 250 µ A 2.0 - 4.0 V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS, V GS = 0V - - 25 µ A V DS = 0.8 x Rated BV DSS, V GS = 0V, T J = 125 o C ... WebSmart Filtering As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. tours segway